The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Dec. 18, 2013
Stichting Imec Nederland, Eindhoven, NL;
Roman Vitushinsky, Vaals, NL;
Peter Offermans, Eindhoven, NL;
Mercedes Crego Calama, Geldrop-Mierlo, NL;
Sywert Brongersma, Eindhoven, NL;
Stichting IMEC Nederland, Eindhoven, NL;
Abstract
The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG. The 2DEG layer stack of the sensor comprises a contact surface contacting the space and provided to contact molecules of the fluidum which is desired to be detected, and the gate of the sensor comprises a doped semiconductor bottom layer of the 2DEG layer stack in electrical contact with at least one gate electrode, where the doped semiconductor bottom layer being located at a side of the 2DEG layer stack opposing the contact surface.