The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Jul. 18, 2011
Applicants:

Seong-jin Kim, Hwaseong-si, KR;

Sang-wook Han, Yangcheon-gu, KR;

Inventors:

Seong-Jin Kim, Hwaseong-si, KR;

Sang-Wook Han, Yangcheon-gu, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/14 (2006.01); G01B 11/02 (2006.01); G01B 21/04 (2006.01); G01S 17/89 (2006.01); G01S 7/486 (2006.01);
U.S. Cl.
CPC ...
G01B 11/026 (2013.01); G01B 21/045 (2013.01); G01S 7/4863 (2013.01); G01S 17/89 (2013.01);
Abstract

A depth sensing apparatus is provided. The depth sensing apparatus may reset, to a reference voltage value, a voltage of each of a first floating diffusion node and a second floating diffusion node of a sensor pixel for a first time period. For a second time period, the depth sensing apparatus may control the first floating diffusion node to store a voltage of a photodiode in a first phase interval, and may control the second floating diffusion node to store the voltage of the photodiode in a second phase interval. The depth sensing apparatus may calculate a difference between the voltage of the first floating diffusion node and the voltage of the second floating diffusion node for a third time period.


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