The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Oct. 18, 2010
Applicant:

Mohammad Shafiqul Kabir, Gothenburg, SE;

Inventor:

Mohammad Shafiqul Kabir, Gothenburg, SE;

Assignee:

Smoltek AB, Göteborg, SE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 31/02 (2006.01); D01F 9/127 (2006.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/41 (2006.01); H01L 29/775 (2006.01); B05D 3/10 (2006.01); C23C 16/44 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
D01F 9/127 (2013.01); B05D 3/107 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 31/0226 (2013.01); C01B 31/0233 (2013.01); C01B 31/0293 (2013.01); C23C 16/44 (2013.01); H01L 29/0676 (2013.01); H01L 29/1606 (2013.01); H01L 29/413 (2013.01); H01L 29/775 (2013.01); H01L 29/2003 (2013.01); Y10T 428/12396 (2015.01);
Abstract

A method for manufacturing a plurality of nanostructures () on a substrate (). The method comprises the steps of: depositing a bottom layer () on an upper surface of the substrate (), the bottom layer () comprising grains having a first average grain size; depositing a catalyst layer () on an upper surface of the bottom layer (), the catalyst layer () comprising grains having a second average grain size different from the first average grain size, thereby forming a stack of layers comprising the bottom layer () and the catalyst layer (); heating the stack of layers to a temperature where nanostructures () can form; and providing a gas comprising a reactant such that the reactant comes into contact with the catalyst layer ().


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