The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Feb. 08, 2010
Applicant:
Pascale Chenevier, Villebon sur Yvette, FR;
Inventor:
Pascale Chenevier, Villebon sur Yvette, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 31/02 (2006.01); C09K 3/00 (2006.01); H01B 1/04 (2006.01); B82Y 40/00 (2011.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 31/0266 (2013.01); C01B 2202/02 (2013.01); C01B 2202/22 (2013.01); C01B 2202/34 (2013.01); C01B 2202/36 (2013.01);
Abstract
A method for separating metal carbon nanotubes with a single graphene layer (m-SWNT) and semiconductor nanotubes with a single graphene layer (sc-SWNT) is provided. The method may comprise a step for grafting, notably by radical chemical grafting, a diazonium salt derivative on a mixture of m-SWNTs and sc-SWNTs so as to obtain a mixture of grafted m-SWNTs, and non-grafted sc-SWNTs, whereby the grafted m-SWNTs and the non-grafted sc-SWNTs separate because of differential chemical and/or physical properties caused by said grafting. In addition, a kit for separating m-SWNTs and sc-SWNTs is provided.