The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
May. 28, 2014
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventor:
Jer-Liang Yeh, Taichung, TW;
Assignee:
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); B28D 5/00 (2006.01); B28D 5/04 (2006.01);
U.S. Cl.
CPC ...
B28D 5/0082 (2013.01); B28D 5/045 (2013.01);
Abstract
An ingot cutting method capable of reducing wafer damage percentage, comprising: forming a layer of nanostructures on at least one surface of an ingot; depositing a buffer layer on the layer of nanostructures; fixing the ingot to a mounting plate by applying a layer of epoxy between the buffer layer and the mounting plate; performing a dicing process on the ingot to get a plurality of wafers; and performing an epoxy removal process on the plurality of wafers.