The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Jul. 31, 2013
Applicant:
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, CN;
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1345 (2006.01); H05K 1/02 (2006.01); H05K 1/16 (2006.01);
U.S. Cl.
CPC ...
H05K 1/025 (2013.01); G02F 1/1345 (2013.01); H05K 1/0248 (2013.01); H05K 1/162 (2013.01); H05K 2201/0326 (2013.01); H05K 2201/0391 (2013.01); H05K 2201/09227 (2013.01); H05K 2201/09763 (2013.01); H05K 2201/10136 (2013.01);
Abstract
A fanout line structure of an array substrate includes first fanout lines arranged on a fanout area of the array substrate, and second fanout lines arranged on the fanout area of the array substrate. A second conducting film is arranged at a bottom of the second fanout line, a second capacitor is formed between the second conducting film and a first conducting film of the second fanout line, the second capacitor is used to reduce an impedance difference between the fanout lines. Capacitance value of the second capacitor is dependent on an overlapping area between the second conducting film and the first conducting film.