The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Apr. 23, 2014
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03G 3/00 (2006.01); H03F 1/02 (2006.01); H03F 1/22 (2006.01); H03F 1/32 (2006.01); H03F 3/193 (2006.01); H03F 1/30 (2006.01);
U.S. Cl.
CPC ...
H03G 3/00 (2013.01); H03F 1/0266 (2013.01); H03F 1/223 (2013.01); H03F 1/3205 (2013.01); H03F 3/193 (2013.01); H03F 1/30 (2013.01); H03F 1/302 (2013.01); H03F 2200/18 (2013.01); H03F 2200/447 (2013.01);
Abstract
A power amplifier includes: a first transistor having a gate, a drain, and a source that is grounded; a second transistor having a gate, a drain, and a source that is connected to the drain of the first transistor; a capacitor connected between the gate of the second transistor and a grounding point; an idling current control circuit having a positive temperature coefficient and making an idling current flowing through the first transistor proportional to an ambient temperature; and a drain voltage control circuit having a positive temperature coefficient and making a drain voltage on the first transistor proportional to the ambient temperature.