The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2015

Filed:

Mar. 29, 2012
Applicants:

Shinichi Miwa, Tokyo, JP;

Yoshihiro Tsukahara, Tokyo, JP;

Ko Kanaya, Tokyo, JP;

Naoki Kosaka, Tokyo, JP;

Inventors:

Shinichi Miwa, Tokyo, JP;

Yoshihiro Tsukahara, Tokyo, JP;

Ko Kanaya, Tokyo, JP;

Naoki Kosaka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/085 (2006.01); H01L 23/66 (2006.01); H03F 1/56 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H03F 3/195 (2006.01); H03F 3/21 (2006.01); H03F 3/24 (2006.01); H01L 23/64 (2006.01); H01L 21/8252 (2006.01);
U.S. Cl.
CPC ...
H03F 1/56 (2013.01); H01L 23/647 (2013.01); H01L 23/66 (2013.01); H01L 27/0207 (2013.01); H01L 27/0605 (2013.01); H01L 27/085 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 3/245 (2013.01); H01L 21/8252 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/49175 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1305 (2013.01); H03F 2200/222 (2013.01); H03F 2200/387 (2013.01); H03F 2203/21106 (2013.01); H03F 2203/21142 (2013.01);
Abstract

A power amplifier includes a semiconductor substrate including transistor cells, a drain electrode for the transistor cells located on the semiconductor substrate, a drain pad located on the semiconductor substrate and connected to the drain electrode, an ion-implanted resistance located in the semiconductor substrate and extending along and in contact with the drain pad, a floating electrode located on the semiconductor substrate and in contact with the ion-implanted resistance, and an output matching circuit located outside the semiconductor substrate. The power amplifier further includes a wire connecting the drain pad to the output matching circuit.


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