The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Dec. 17, 2013
Mitsubishi Electric Corporation, Tokyo, JP;
Kimio Shigihara, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A semiconductor laser device includes an n-type semiconductor substrate, an n-type cladding layer laminated on the semiconductor substrate, an n-side light guiding layer laminated on the n-type cladding layer, an active layer laminated on the n-side light guiding layer, a p-side light guiding layer laminated on the active layer, and a p-type cladding layer laminated on the p-side light guiding layer. The sum of the thicknesses of the n-side and p-side light guiding layers is such that the first and higher order modes of oscillation can occur in the crystal growth direction. A low refractive index layer having a lower refractive index than the n-type cladding layer is located between the n-side light guiding layer and the n-type cladding layer, and the active layer is displaced from the lateral center plane of the light guiding layer structure toward the p-type cladding layer.