The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2015

Filed:

Nov. 06, 2014
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Adrian Avramescu, Regensburg, DE;

Désirée Queren, Neutraubling, DE;

Christoph Eichler, Tegernheim, DE;

Matthias Sabathil, Regensburg, DE;

Stephan Lutgen, Dresden, DE;

Uwe Strauss, Bad Abbach, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01L 33/06 (2010.01); B82Y 20/00 (2011.01); H01L 33/32 (2010.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); B82Y 20/00 (2013.01); H01L 33/32 (2013.01); H01S 5/3407 (2013.01); H01S 5/3425 (2013.01); H01S 5/34333 (2013.01); H01L 2924/0002 (2013.01); H01S 2301/173 (2013.01); Y10S 977/95 (2013.01); Y10S 977/951 (2013.01);
Abstract

An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition:50≦∫(35−())−2.5−1.5∫≦120.


Find Patent Forward Citations

Loading…