The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2015

Filed:

Oct. 04, 2012
Applicants:

Rohm Co., Ltd., Kyoto-fu, JP;

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Osamu Matsushima, Kyoto-fu, JP;

Masaki Takaoka, Kyoto-fu, JP;

Kenichi Miyazaki, Kyoto-fu, JP;

Shogo Ishizuka, Ibaraki, JP;

Keiichiro Sakurai, Ibaraki, JP;

Shigeru Niki, Ibaraki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 27/146 (2006.01); H01L 31/032 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 27/14632 (2013.01); H01L 27/14665 (2013.01); H01L 27/14687 (2013.01); H01L 31/0322 (2013.01);
Abstract

A solid state imaging device includes a circuit unit formed on a substrate and a photoelectric conversion unit. The photoelectric conversion circuit includes a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film. The lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.


Find Patent Forward Citations

Loading…