The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Jul. 31, 2012
Tsuyoshi Kawakami, Tokyo, JP;
Yoshiyuki Nakaki, Tokyo, JP;
Yoshio Fujii, Tokyo, JP;
Hiroshi Watanabe, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Tsuyoshi Kawakami, Tokyo, JP;
Yoshiyuki Nakaki, Tokyo, JP;
Yoshio Fujii, Tokyo, JP;
Hiroshi Watanabe, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.