The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2015

Filed:

May. 14, 2010
Applicants:

Alexander Dietrich Hölke, Sarawak, MY;

Deb Kumar Pal, Sarawak, MY;

Kia Yaw Kee, Sarawak, MY;

Hao Yang, Sarawak, MY;

Inventors:

Alexander Dietrich Hölke, Sarawak, MY;

Deb Kumar Pal, Sarawak, MY;

Kia Yaw Kee, Sarawak, MY;

Hao Yang, Sarawak, MY;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8611 (2013.01); H01L 29/405 (2013.01); H01L 29/407 (2013.01);
Abstract

A semiconductor device comprising: a p or p+ doped portion; an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion; an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and at least one additional portion which is arranged for significantly reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions.


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