The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
May. 19, 2011
Applicants:
Konstantin V. Loiko, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Mehul D. Shroff, Austin, TX (US);
Inventors:
Konstantin V. Loiko, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Mehul D. Shroff, Austin, TX (US);
Assignee:
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); B82Y 10/00 (2011.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7881 (2013.01); B82Y 10/00 (2013.01); H01L 29/42332 (2013.01); H01L 29/66825 (2013.01); G11C 16/0425 (2013.01);
Abstract
A method of making a non-volatile memory cell includes forming a plurality of discrete storage elements. A tensile dielectric layer is formed among the discrete storage elements and provides lateral tensile stress to the discrete storage elements. A gate is formed over the discrete storage elements.