The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2015

Filed:

Mar. 14, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Daniel C. Edelstein, White Plains, NY (US);

Elbert E. Huang, Carmel, NY (US);

Robert D. Miller, San Jose, CA (US);

Assignee:

GLOBALFOUNDRIES U.S. 2 LLC, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); G03F 7/00 (2013.01); G03F 7/2022 (2013.01); H01L 21/0271 (2013.01); H01L 21/31144 (2013.01); H01L 21/7682 (2013.01); H01L 21/76826 (2013.01); H01L 21/76834 (2013.01); H01L 21/76883 (2013.01); H01L 23/5222 (2013.01); H01L 23/53295 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A structure is provided with a self-aligned resist layer on a surface of metal interconnects for use in forming air gaps in an insulator material and method of fabricating the same. The non-lithographic method includes applying a resist on a structure which has at least one metal interconnect formed in an insulator material. The method further includes blanket-exposing the resist to energy and developing the resist to expose surfaces of the insulator material while protecting the metal interconnects. The method further includes forming air gaps in the insulator material by an etching process, while the metal interconnects remain protected by the resist.


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