The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2015

Filed:

Oct. 23, 2013
Applicant:

Pixtronix, Inc., San Diego, CA (US);

Inventors:

Patrick F. Brinkley, San Mateo, CA (US);

Wilhelmus A. De Groot, Palo Alto, CA (US);

Jasper L. Steyn, Cupertino, CA (US);

Elif Selin Mungan, Lafayette, IN (US);

Assignee:

Pixtronix, Inc., San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); B81C 1/00 (2006.01); G02B 26/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1218 (2013.01); B81C 1/00246 (2013.01); G02B 26/023 (2013.01); H01L 27/1255 (2013.01); H01L 29/6675 (2013.01); H01L 29/78603 (2013.01); H01L 29/78642 (2013.01); B81B 2207/015 (2013.01); B81C 2203/0742 (2013.01); B81C 2203/0778 (2013.01);
Abstract

This disclosure provides systems, methods and apparatus for forming electromechanical systems (EMS) displays where the area of a substrate occupied by a pixel circuit can be reduced if portions of the pixel circuit can be built in three dimensions. In some aspects, certain EMS displays can incorporate structures that are substantially normal to the surface of a substrate. Incorporating circuit components, such as transistors, into such structures, can reduce the area they occupy within the plane of the substrate. In some aspects, the components of a transistor can be fabricated directly into a MEMS anchor that supports a light modulator or a portion of an actuator over the substrate. In some other aspects, the transistor can be fabricated on one or more sidewalls of any MEMS structure.


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