The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Apr. 19, 2005
Paul R. Besser, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Connie Pin-chin Wang, Mountain View, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Hieu T. Pham, Milpitas, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Connie Pin-Chin Wang, Mountain View, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Hieu T. Pham, Milpitas, CA (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A semiconductor component and a method for manufacturing the semiconductor component that are suitable for use with low temperature processing. A semiconductor substrate is provided and an optional layer of silicon nitride is formed on the semiconductor substrate using Atomic Layer Deposition (ALD). A layer of dielectric material is formed on the silicon nitride layer using Sub-Atmospheric Chemical Vapor Deposition (SACVD) at a temperature below about 450° C. When the optional layer of silicon nitride is not present, the SACVD dielectric material is formed on the semiconductor substrate. A contact hole having sidewalls is formed through the SACVD dielectric layer, through the silicon nitride layer, and exposes a portion of the semiconductor substrate. A layer of tungsten nitride is formed on the exposed portion of the semiconductor substrate and along the sidewalls of the contact hole. Tungsten is formed on the layer of tungsten nitride.