The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Dec. 16, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Nam-Jae Lee, Gyeonggi-do, KR;
Seiichi Aritome, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 27/11521 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01);
Abstract
A nonvolatile memory device includes a substrate having active regions that are defined by an isolation layer and that have first sidewalls extending upward from the isolation layer, floating gates adjoining the first sidewalls of the active regions with a tunnel dielectric layer interposed between the active regions and the floating gates and extending upward from the substrate, an intergate dielectric layer disposed over the floating gates, and control gates disposed over the intergate dielectric layer.