The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Dec. 27, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Sung-Min Hwang, Seoul, KR;
Hansoo Kim, Suwon-si, KR;
Woonkyung Lee, Seongnam-si, KR;
Wonseok Cho, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); G11C 16/04 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A three-dimensional semiconductor device includes a substrate having a cell array region between first and second contact regions. A first stack includes a plurality of first electrodes vertically provided on the substrate, and a second stack includes a plurality of second electrodes vertically provided on the first stack. The second stack is arranged to expose end portions of the first electrodes on the first contact region and overlap end portions of the first electrodes on the second contact region.