The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Oct. 19, 2012
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Changho Jung, San Diego, CA (US);
Nishith Desai, San Diego, CA (US);
Sei Seung Yoon, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/418 (2006.01); G11C 8/08 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/418 (2013.01); G11C 8/08 (2013.01); G11C 11/419 (2013.01);
Abstract
A write-assisted memory. The write-assisted memory includes a word-line decoder that is implemented within a low VDD power domain. The write-assisted memory also includes a write-segment controller that is partially implemented within the low VDD power domain and is partially implemented within a high VDD power domain. The write-assisted memory further includes a local write word-line decoder that is implemented within the high VDD power domain.