The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Oct. 25, 2010
Applicants:
Shunpei Yamazaki, Setagaya, JP;
Keitaro Imai, Yokohama, JP;
Jun Koyama, Sagamihara, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); G11C 11/404 (2006.01); G11C 11/405 (2006.01); G11C 16/02 (2006.01); H01L 21/8258 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 27/105 (2006.01); H01L 27/115 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
G11C 11/404 (2013.01); G11C 11/405 (2013.01); G11C 16/02 (2013.01); H01L 21/8258 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 27/105 (2013.01); H01L 27/1156 (2013.01); H01L 27/12 (2013.01); H01L 27/1225 (2013.01); H01L 27/0922 (2013.01);
Abstract
The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10A or less.