The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Oct. 14, 2009
Xiaohai Xiang, Danville, CA (US);
Yun-fei LI, Fremont, CA (US);
Jinqiu Zhang, Fremont, CA (US);
Hongping Yuan, Fremont, CA (US);
Xianzhong Zeng, Fremont, CA (US);
Hai Sun, Milpitas, CA (US);
Xiaohai Xiang, Danville, CA (US);
Yun-Fei Li, Fremont, CA (US);
Jinqiu Zhang, Fremont, CA (US);
Hongping Yuan, Fremont, CA (US);
Xianzhong Zeng, Fremont, CA (US);
Hai Sun, Milpitas, CA (US);
Western Digital (Fremont), LLC., Fremont, CA (US);
Abstract
Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.