The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2015

Filed:

Jun. 24, 2014
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Kazuhiro Matsunami, Matsumoto, JP;

Katsuyuki Uematsu, Hata-machi, JP;

Mutsuo Nishikawa, Matsumoto, JP;

Shigeru Shinoda, Matsumoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H01L 29/66 (2006.01); G01L 9/00 (2006.01); F02D 41/14 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0052 (2013.01); G01L 9/0045 (2013.01); G01L 9/0055 (2013.01); F02D 41/1448 (2013.01);
Abstract

Aspects of a semiconductor pressure sensor device can include a semiconductor substrate having a depressed portion which forms a vacuum reference chamber, a diaphragm disposed on the front surface of the semiconductor substrate, and strain gauge resistors. The device can further include an aluminum wiring layer disposed on the semiconductor substrate, an antireflection film which is a TiN film disposed on the aluminum wiring layer, an adhesion securing and diffusion preventing layer which is a film stack of a Cr film and Pt film disposed on the TiN film, and an Au film stacked on the adhesion securing and diffusion preventing layer.


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