The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Jun. 27, 2011
James Robert Janesick, Huntington Beach, CA (US);
James Robert Janesick, Huntington Beach, CA (US);
SRI INTERNATIONAL, Menlo Park, CA (US);
Abstract
A readout transistor circuit for a pixel is disclosed. The readout transistor circuit includes a sense node. A reset transistor is in signal communication with the sense node. A source follower transistor is in signal communication with the sense node. A row select transistor is in signal communication with the source follower transistor. A switching transistor is in signal communication with the sense node. A capacitor is in signal communication with the switching transistor. The switching transistor is configured to place the capacitor in signal communication with the sense node to switch between a low voltage-per-charge (V/e−) ratio and a high voltage-per-charge (V/e−) to enable low noise performance of the sense node. The capacitor may be a metal-insulator-metal (MIM) capacitor. At least one of the reset transistor, the source follower transistor, the row select transistor, and the switching transistor may be a MOSFET. One or more of the MOSFETs may be a buried channel MOSFET.