The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Sep. 20, 2010
Applicants:
Ying Chen, Waurn Ponds, AU;
Luhua LI, Waurn Ponds, AU;
Assignee:
Deakin University, Waurn Ponds, Victoria, unknown;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 35/14 (2006.01); B82Y 30/00 (2011.01); C01B 21/064 (2006.01); C10M 103/06 (2006.01); C23C 24/08 (2006.01); C23C 26/00 (2006.01); C30B 25/00 (2006.01); C30B 29/40 (2006.01); C30B 29/60 (2006.01); C04B 35/622 (2006.01); C04B 35/626 (2006.01);
U.S. Cl.
CPC ...
C01B 35/146 (2013.01); B82Y 30/00 (2013.01); C01B 21/0641 (2013.01); C04B 35/6229 (2013.01); C04B 35/6261 (2013.01); C04B 35/6265 (2013.01); C10M 103/06 (2013.01); C23C 24/08 (2013.01); C23C 26/00 (2013.01); C30B 25/00 (2013.01); C30B 29/403 (2013.01); C30B 29/602 (2013.01); C01P 2002/72 (2013.01); C01P 2002/85 (2013.01); C01P 2004/03 (2013.01); C01P 2004/04 (2013.01); C01P 2004/13 (2013.01); C01P 2004/16 (2013.01); C04B 2235/3241 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3272 (2013.01); C04B 2235/3275 (2013.01); C04B 2235/3279 (2013.01); C04B 2235/405 (2013.01); C04B 2235/421 (2013.01); C04B 2235/443 (2013.01); C04B 2235/46 (2013.01); C04B 2235/5284 (2013.01); C04B 2235/5454 (2013.01); C10M 2201/061 (2013.01); C10M 2201/087 (2013.01); C10N 2220/082 (2013.01); Y10T 428/25 (2015.01);
Abstract
A process for producing boron nitride nanotubes and nanotube films, which process comprises heating a liquid composition comprising boron particles and a metal compound, wherein heating takes place at a temperature of from 800-1300° C. in a gaseous atmosphere containing nitrogen that causes boron nitride nanotubes to grow, and wherein the boron particles have an average particle size of less than 100 nm, and wherein the metal compound is selected such that it promotes the growth of boron nitride nanotubes during heating.