The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Dec. 14, 2011
Applicants:

Kazuki Fujita, Hamamatsu, JP;

Ryuji Kyushima, Hamamatsu, JP;

Harumichi Mori, Hamamatsu, JP;

Inventors:

Kazuki Fujita, Hamamatsu, JP;

Ryuji Kyushima, Hamamatsu, JP;

Harumichi Mori, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01); H04N 5/347 (2011.01); H04N 5/345 (2011.01); H04N 5/217 (2011.01); H04N 5/374 (2011.01); H01L 27/146 (2006.01); H04N 5/32 (2006.01);
U.S. Cl.
CPC ...
H04N 5/347 (2013.01); H01L 27/14656 (2013.01); H01L 27/14658 (2013.01); H01L 27/14692 (2013.01); H04N 5/2175 (2013.01); H04N 5/335 (2013.01); H04N 5/345 (2013.01); H04N 5/3456 (2013.01); H04N 5/374 (2013.01); H04N 5/32 (2013.01);
Abstract

Charges accumulated in pixels contained in one or a plurality of readout object rows that form a partial region of a photodetecting region are selectively read out in each of the L times (L is an integer not less than 2) of imaging frames, and in each of the L times of imaging frames, resetting of charges accumulated in pixels contained in only a part of non-readout object rows is performed, as well as, resetting is performed at least once in a period of the L times of imaging frames for each of the two or more non-readout object rows. Accordingly, a control method for a solid-state imaging element capable of reducing the time required per one imaging frame and reducing load on the peripheral circuit when selectively reading out charges accumulated in pixels in a partial region of the photodetecting region is realized.


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