The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Aug. 03, 2012
Applicants:
Hye Ran Jung, Busan, KR;
Soo Jin Park, Ulsan, KR;
Jung IN Lee, Gyeonggi-do, KR;
Yong Ju Lee, Daejeon, KR;
MI Rim Lee, Seoul, KR;
Jae Phil Cho, Gyeonggi-do, KR;
Je Young Kim, Daejeon, KR;
Dong Sub Jung, Daejeon, KR;
Yoon Ah Kang, Seoul, KR;
Inventors:
Hye Ran Jung, Busan, KR;
Soo Jin Park, Ulsan, KR;
Jung In Lee, Gyeonggi-do, KR;
Yong Ju Lee, Daejeon, KR;
Mi Rim Lee, Seoul, KR;
Jae Phil Cho, Gyeonggi-do, KR;
Je Young Kim, Daejeon, KR;
Dong Sub Jung, Daejeon, KR;
Yoon Ah Kang, Seoul, KR;
Assignees:
LG Chem, Ltd., , KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 6/14 (2006.01); H01M 4/04 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 4/36 (2006.01); H01M 4/48 (2010.01); H01M 10/0525 (2010.01); C23C 18/54 (2006.01); H01M 4/133 (2010.01); H01M 4/1393 (2010.01);
U.S. Cl.
CPC ...
H01M 4/0452 (2013.01); C23C 18/54 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/364 (2013.01); H01M 4/366 (2013.01); H01M 4/483 (2013.01); H01M 10/0525 (2013.01); H01M 4/133 (2013.01); H01M 4/1393 (2013.01); Y02E 60/122 (2013.01); Y02T 10/7011 (2013.01);
Abstract
Disclosed herein is a porous silicon-based electrode active material, comprising a silicon phase, a SiO(0<x<2) phase and a silicon dioxide phase and having a porosity of 7-71%.