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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9196808 B1

PDFFull Text
Date of Patent:
Nov. 24, 2015

Filed:

May. 23, 2014

Semiconductor light emitting device

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Masakazu Takao, Kyoto, JP;

Mitsuhiko Sakai, Kyoto, JP;

Kazuhiko Senda, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Ngan Ngo

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/60 (2010.01); H01L 33/04 (2010.01); H01L 33/10 (2010.01); H01L 33/40 (2010.01); H01L 33/46 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/40 (2013.01); H01L 33/405 (2013.01); H01L 33/46 (2013.01); H01L 33/30 (2013.01);
Abstract

A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate; a metal layer disposed on the GaAs substrate; and a light emitting diode structure. The light emitting diode structure includes a patterned metal contact layer and a patterned insulating layer disposed on the metal layer, a p type cladding layer disposed on the patterned metal contact layer and the patterned insulating layer, a multi-quantum well layer disposed on the p type cladding layer, an n type cladding layer disposed on the multi-quantum well layer, and a window layer disposed on the n type cladding layer. The GaAs substrate and the light emitting diode structure are bonded by using the metal layer.

Find Patent Forward Citations

Takao, Masakazu. (2015). Semiconductor light emitting device (U.S. Patent No. 9196808). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9196808

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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