The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Oct. 23, 2013
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventor:

Hiroaki Matsumura, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan-Shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/60 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/382 (2013.01); H01L 2924/0002 (2013.01);
Abstract

To provide a semiconductor light emitting element with high luminous efficiency, the light emitting element includes: a substrate; a semiconductor laminate placed above the substrate, the semiconductor laminate comprising a second semiconductor layer, an active layer and a first semiconductor layer laminated in this order from the substrate; and a first electrode and a second electrode placed between the substrate and the semiconductor laminate, wherein the semiconductor laminate is divided in a plurality of semiconductor blocks by a groove, wherein the first electrode includes protrusions that are provided in each of the plurality of semiconductor blocks and that penetrate the second semiconductor layer and the active layer to be connected to the first semiconductor layer, and wherein the second electrode is connected to the second semiconductor layer in each of the plurality of semiconductor blocks and has an external connector that is exposed on the bottom of the groove.


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