The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Apr. 02, 2012
Applicants:

Takashi Ichihara, Shah Alam, MY;

Hiroaki Kageyama, Tokushima, JP;

Inventors:

Takashi Ichihara, Shah Alam, MY;

Hiroaki Kageyama, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/56 (2010.01); H01L 33/44 (2010.01); H01L 33/60 (2010.01); H01L 33/46 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/56 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/60 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01);
Abstract

[Object] [Means for Solving Problem] A method for manufacturing of a semiconductor light emitting element has; forming a semiconductor layer laminated of a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer, in this order, forming an electrode including a silver-containing layer in contact with an upper surface of the second conductivity type semiconductor layer, forming an insulating layer coating over at least a side surface of the silver-containing layer from the upper surface of the second conductivity type semiconductor layer by an atomic layer deposition method.


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