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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9196796 B1

PDFFull Text
Date of Patent:
Nov. 24, 2015

Filed:

Aug. 09, 2011

Semiconductor light emitting diode having ohmic electrode structure and method of manufacturing the same

Applicants:

Jong Lam Lee, Pohang-si, KR;

Yang Hee Song, Seongnam-si, KR;

Inventors:

Jong Lam Lee, Pohang-si, KR;

Yang Hee Song, Seongnam-si, KR;

Assignees:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Postech Academy-Industry Foundation, Pohang-si, KR;

Attorney:

H.C. Park & Associates, PLC

Primary Examiner:

Mary Wilczewski

Assistant Examiner:

Tsz Chiu

Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/42 (2010.01); H01L 29/10 (2006.01); H01L 23/48 (2006.01); H01L 33/40 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/40 (2013.01); H01L 33/0095 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 2933/0016 (2013.01);
Abstract

Embodiments of the invention provide a semiconductor light emitting diode having an ohmic electrode structure, and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting structure having an upper surface constituting an N-face; and an ohmic electrode structure located on the light emitting structure. Here, the ohmic electrode structure includes a lower diffusion preventing layer, a contact layer, an upper diffusion preventing layer, and an Al protective layer from the N-face of the light emitting structure.

Find Patent Forward Citations

Lee, Jong. (2015). Semiconductor light emitting diode having ohmic electrode structure and method of manufacturing the same (U.S. Patent No. 9196796). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9196796

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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