The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Apr. 03, 2014
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Toshiyuki Fujita, Osaka, JP;

Akira Inoue, Osaka, JP;

Toshiya Yokogawa, Nara, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/16 (2010.01); H01L 33/22 (2010.01); H01L 33/34 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/16 (2013.01); H01L 33/22 (2013.01); H01L 33/34 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A semiconductor light-emitting device made of a nitride-based semiconductor includes a semiconductor stacked structure having a nonpolar plane or a semipolar plane as a principal plane, and including an active layer for emitting polarized light. The semiconductor light-emitting device includes a striped structure which is provided in a position intersecting an exit path of the polarized light and includes a plurality of recesses. An angle formed between the extension direction of the recesses and the polarization direction of the polarized light is from 0° to 45°. The recesses have a minute uneven structure (texture) at at least part of a surface of each recess, the minute uneven structure being shallower than the depth of each recess.


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