The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jul. 24, 2013
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Fraunhofer-gesellschaft Zur Förderung Der Angewandten Forschung E.v., München, DE;
Matthias Peter, Regensburg, DE;
Simeon Katz, Obertraubling, DE;
Jürgen Off, Regensburg, DE;
Korbinian Perzlmaier, Regensburg, DE;
Kai Gehrke, Regensburg, DE;
Rolf Aidam, Wyhl, DE;
Jürgen Däubler, Freiburg, DE;
Thorsten Passow, Freiburg, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., München, DE;
Abstract
A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile