The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jan. 23, 2013
Applicant:
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Inventors:
Alexandre Lagrange, Eybens, FR;
Stephan Landis, Voiron, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 29/06 (2006.01); H01L 33/18 (2010.01); H01L 33/24 (2010.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 21/02 (2006.01); H01L 27/15 (2006.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/005 (2013.01); B82Y 10/00 (2013.01); H01L 27/156 (2013.01); H01L 29/0676 (2013.01); H01L 33/0079 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); B82Y 40/00 (2013.01); H01L 21/02603 (2013.01); H01L 27/153 (2013.01); H01L 33/08 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0016 (2013.01);
Abstract
A method for producing a microelectronic device including a plurality of light emitting diodes each including a wire of nanometric or micrometric size, the method including: growing the nanowires from a growth substrate; forming at least one dielectric layer on a transfer substrate distinct from the growth substrate; and penetration by the nanowires in the dielectric layer.