The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jun. 04, 2012
Hong-long Ning, Suwon-si, KR;
Byeong-beom Kim, Suwon-si, KR;
Chang-oh Jeong, Suwon-si, KR;
Sang-won Shin, Yongin-si, KR;
Hyeong-suk Yoo, Yongin-si, KR;
Xin-xing LI, Suwon-si, KR;
Joon-yong Park, Gunpo-si, KR;
Hyun-ju Kang, Pocheon-si, KR;
Su-kyoung Yang, Chuncheon-si, KR;
Kyung-seop Kim, Incheon, KR;
Hong-Long Ning, Suwon-si, KR;
Byeong-Beom Kim, Suwon-si, KR;
Chang-Oh Jeong, Suwon-si, KR;
Sang-Won Shin, Yongin-si, KR;
Hyeong-Suk Yoo, Yongin-si, KR;
Xin-Xing Li, Suwon-si, KR;
Joon-Yong Park, Gunpo-si, KR;
Hyun-Ju Kang, Pocheon-si, KR;
Su-Kyoung Yang, Chuncheon-si, KR;
Kyung-Seop Kim, Incheon, KR;
SAMSUNG DISPLAY CO., LTD., , KR;
Abstract
A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.