The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Dec. 14, 2012
Applicants:

Innocom Technology (Shenzhen) Co., Ltd., Shenzhen, CN;

Chimei Innolux Corporation, Chu-Nan, TW;

Inventor:

Szu-Wei Lai, Chu-Nan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 51/52 (2006.01); H01L 29/786 (2006.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); H01L 21/02697 (2013.01); H01L 21/32134 (2013.01); H01L 27/124 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01); H01L 33/0041 (2013.01); H01L 51/52 (2013.01);
Abstract

The invention provides a thin-film transistor substrate, including: a substrate; a metal lead structure formed on the substrate, wherein the metal lead structure includes: a main conductor layer formed on the substrate, wherein the main conductor has a sidewall; a top conductor layer having a first portion, second portion and third portion, wherein the first portion is formed on the main conductor layer, the second portion is formed on the sidewall of the main conductor layer, and the third portion is formed on the substrate, and a continuous structure is formed by the first portion, the second portion and the third portion.


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