The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Aug. 08, 2014
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, JP;
Inventors:
Ippei Kume, Kawasaki, JP;
Takashi Onizawa, Kawasaki, JP;
Takashi Hase, Kawasaki, JP;
Shigeru Hirao, Kawasaki, JP;
Tadatoshi Danno, Kawasaki, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/267 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 29/66 (2006.01); H01L 23/31 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7849 (2013.01); H01L 21/78 (2013.01); H01L 23/3178 (2013.01); H01L 29/267 (2013.01); H01L 29/4236 (2013.01); H01L 29/66462 (2013.01); H01L 29/66522 (2013.01); H01L 29/7786 (2013.01); H01L 29/78 (2013.01); H01L 23/562 (2013.01); H01L 29/2003 (2013.01);
Abstract
Sometimes to warp a group III nitride semiconductor and a silicon by the stress of the group III nitride semiconductor acting on the silicon. A semiconductor device includes a substrate, a buffer layer, and a semiconductor layer. A trench is formed on a sixth face of the semiconductor layer. The trench passes through the semiconductor layer and the buffer layer. The bottom of the trench reaches at least the inside of the substrate.