The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Apr. 21, 2014
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Nobuki Miyakoshi, Hanno, JP;
Masanori Fukui, Hanno, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A semiconductor device includes, in a cell region thereof: a low resistance semiconductor layer; a drift layer; a base region; a high-concentration semiconductor region; and a gate electrode layer. The semiconductor device includes, in a peripheral region thereof: the low resistance semiconductor layer; the drift layer; which is formed over the low resistance semiconductor layer; a gate lead line; a gate finger; and a gate pad. The gate electrode layer and the gate lead line are electrically connected with each other by way of a resistor made of polysilicon containing an impurity, and an impurity concentration in polysilicon which forms the resistor is lower than an impurity concentration in polysilicon which forms the gate electrode layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile