The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jan. 10, 2014
Renesas Electronics Corporation, Kanagawa, JP;
Satoru Tokuda, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Abstract
A first lower insulating film (LIL1) is formed on the bottom surface and a lower portion of the side surface of a first concave portion (gate trench) and is thicker than a gate insulating film (GIF). An upper end of LIL1 is connected to a lower end of the GIF. A second lower insulating film is formed on the bottom surface and a lower portion of the side surface of a second concave portion (termination trench). An upper insulating film (UIF) is formed at an upper portion of the side surface of the second concave portion and a lower end is connected to an upper end of LIL2. The depth of the second concave portion is ≧90% and ≦110% of the depth of the first concave portion. The thickness of LIL2 is ≧95% and ≦105% of the thickness of LIL1. The UIF is thicker than the GIF.