The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Aug. 20, 2014
Northrop Grumman Systems Corporation, Falls Church, VA (US);
The United States of America, As Represented BY the Secretary of the Navy, Washington, DC (US);
The Regents of the University of California, Oakland, CA (US);
Karl D. Hobart, Upper Marlboro, MD (US);
Tatyana I. Feygelson, Springfield, VA (US);
Eugene I. Imhoff, Washington, DC (US);
Travis J. Anderson, Alexandria, VA (US);
Joshua D. Caldwell, Accokeek, MD (US);
Andrew D. Koehler, Washington, DC (US);
Bradford B. Pate, Arlington, VA (US);
Marko J. Tadjer, Virginia Beach, VA (US);
Rajinder S. Sandhu, Castaic, CA (US);
Vincent Gambin, Torrance, CA (US);
Gregory Lewis, Tustin, CA (US);
Ioulia Smorchkova, Lakewood, CA (US);
Mark Goorsky, Valencia, CA (US);
Jeff McKay, Rowland Heights, CA (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
The United States of America, as Represented by the Secretary of the Navy, Washington, DC (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.