The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Aug. 19, 2014
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Nanoholdings, Llc, Rowayton, CT (US);
Franky So, Gainesville, FL (US);
Do Young Kim, Gainesville, FL (US);
Bhabendra K. Pradhan, Marietta, GA (US);
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Nanoholdings, LLC, Rowayton, CT (US);
Abstract
Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.