The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jun. 26, 2014
Canon Kabushiki Kaisha, Tokyo, JP;
Koichi Tazoe, Sagamihara, JP;
Yu Arishima, Yokohama, JP;
Akira Okita, Yamato, JP;
Kazuki Ohshitanai, Kawasaki, JP;
Yasuharu Ota, Kawasaki, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A photoelectric conversion device includes: a first semiconductor region of a first conductivity type, which configures a first photoelectric conversion element; a second semiconductor region of the first conductivity type, which configures a second photoelectric conversion element; a third semiconductor region of the first conductivity type; a fourth semiconductor region of the first conductivity type; a first gate electrode, configuring a first transfer transistor conjointly; and a second gate electrode, configuring a second transfer transistor. At a side of the first gate electrode which is toward the first semiconductor region in plan view of the surface of the semiconductor substrate, a length of the side of the first gate electrode toward the first semiconductor region, is shorter than a length of the active region, and a length of the side of the first gate electrode toward the first semiconductor region, is longer than a length of the first semiconductor region.