The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Oct. 21, 2014
Applicants:
Bo-young Lee, Hwaseong-si, KR;
Jongwan Choi, Suwon-si, KR;
Myoungbum Lee, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/115 (2006.01); H01L 21/764 (2006.01); H01L 21/762 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/764 (2013.01); H01L 21/76229 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01);
Abstract
Semiconductor devices, and methods of fabricating the same, include forming a trench between a plurality of patterns on a substrate to be adjacent to each other, forming a first sacrificial layer in the trench, forming a first porous insulation layer having a plurality of pores on the plurality of patterns and on the first sacrificial layer, and removing the first sacrificial layer through the plurality of pores of the first porous insulation layer to form a first air gap between the plurality of patterns and under the first porous insulation layer.