The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Nov. 07, 2011
Applicant:
Min Soo Yoo, Gyeonggi-do, KR;
Inventor:
Min Soo Yoo, Gyeonggi-do, KR;
Assignee:
HYNIX SEMICONDUCTOR INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10855 (2013.01); H01L 21/76224 (2013.01); H01L 21/76801 (2013.01); H01L 21/76897 (2013.01); H01L 27/10876 (2013.01); H01L 27/10814 (2013.01);
Abstract
A semiconductor device and a method of fabricating the same are provided, in which a full overlap between a storage node contact and an active region to solve an overlay in an etching process and an etching width of a storage node is increased to improve a processing margin. The semiconductor device includes a main gate and a device isolation structure disposed in a semiconductor device, an isolation pattern disposed over the device isolation structure, and contact plugs disposed at each side of the isolation pattern.