The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Jul. 17, 2013
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Yoshiko Tamada, Tokyo, JP;

Seiji Oka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 25/07 (2006.01); H01L 23/049 (2006.01); H01L 23/24 (2006.01); H01L 23/373 (2006.01); H01L 23/433 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 25/18 (2006.01); H01L 23/14 (2006.01); H01L 23/15 (2006.01); H01L 23/367 (2006.01); H01L 23/00 (2006.01); H05K 1/05 (2006.01); H05K 3/28 (2006.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 23/049 (2013.01); H01L 23/145 (2013.01); H01L 23/15 (2013.01); H01L 23/24 (2013.01); H01L 23/3107 (2013.01); H01L 23/3675 (2013.01); H01L 23/3735 (2013.01); H01L 23/3736 (2013.01); H01L 23/4334 (2013.01); H01L 23/49811 (2013.01); H01L 24/49 (2013.01); H01L 25/18 (2013.01); H05K 1/05 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/291 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/4911 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/30107 (2013.01); H05K 1/053 (2013.01); H05K 3/284 (2013.01); H05K 2203/1316 (2013.01);
Abstract

A power semiconductor module includes a base plate as a metallic heat dissipating body, a first insulating layer on the base plate, and a first wiring pattern on the first insulating layer. On a predetermined region that is a part of the first wiring pattern, a second wiring pattern for a second layer is laminated via only a second insulating layer made of resin, thereby forming a pattern laminated region. A power semiconductor element is mounted in a region other than the pattern laminated region on the first wiring pattern. The base plate, the first insulating layer, the first wiring pattern, the second insulating layer, the second wiring pattern, and the power semiconductor element are integrally sealed with a transfer mold resin, thus obtaining the power semiconductor module.


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