The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Oct. 17, 2013
Applicants:

Jürgen Steger, Hiltpolstein, DE;

Peter Beckedahl, Oberasbach, DE;

Inventors:

Jürgen Steger, Hiltpolstein, DE;

Peter Beckedahl, Oberasbach, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/482 (2006.01); H01L 25/07 (2006.01); H01L 23/373 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/482 (2013.01); H01L 23/3735 (2013.01); H01L 23/5385 (2013.01); H01L 23/5387 (2013.01); H01L 25/072 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A power semiconductor module comprising a substrate. The power semiconductor module has first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are electrically conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common side in relation to the first and second DC voltage load current connection elements. The invention provides a power semiconductor module having a particularly low-inductance construction.


Find Patent Forward Citations

Loading…