The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Sep. 07, 2011
Applicants:

Dirk Siepe, Warstein, DE;

Reinhold Bayerer, Warstein, DE;

Inventors:

Dirk Siepe, Warstein, DE;

Reinhold Bayerer, Warstein, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/15 (2006.01); H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/78 (2013.01); H01L 24/85 (2013.01); H01L 24/45 (2013.01); H01L 24/83 (2013.01); H01L 25/072 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05172 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/48491 (2013.01); H01L 2224/48747 (2013.01); H01L 2224/48766 (2013.01); H01L 2224/48847 (2013.01); H01L 2224/48866 (2013.01); H01L 2224/49 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/78313 (2013.01); H01L 2224/8383 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/8501 (2013.01); H01L 2224/85205 (2013.01); H01L 2924/01002 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0104 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/0106 (2013.01); H01L 2924/0107 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01041 (2013.01); H01L 2924/01068 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/2076 (2013.01);
Abstract

A semiconductor arrangement includes a silicon body having a top surface and a bottom surface, and a thick metal layer arranged on the top surface of the silicon body. The thick metal layer has a bonding surface facing away from the top surface of the silicon body. A bonding wire or a ribbon is bonded to the thick metal layer at the bonding surface of the thick metal layer. The thickness of the thick metal layer is at least 10 micrometers (μm), the thick metal layer comprises copper or a copper alloy, and the bonding wire or ribbon comprises copper or a copper-based material.


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