The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Oct. 31, 2013
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Roman Roth, Sattendorf, AT;
Frank Umbach, Munich, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/367 (2006.01); H01L 21/283 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 21/283 (2013.01); H01L 29/8611 (2013.01); H01L 29/0619 (2013.01); H01L 29/404 (2013.01);
Abstract
A method for forming a semiconductor device includes providing a semiconductor substrate having a first area and a second area. A first metal layer structure is formed which includes at least a first metal portion in the first area and a second metal portion in the second area. A plating mask is formed on the first metal layer structure to cover the second metal portion, and a second metal layer structure is plated on and in ohmic contact with the first metal portion of the first metal layer structure.