The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Nov. 12, 2013
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Tsuyoshi Kanki, Atsugi, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/14 (2006.01); H01L 23/498 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76852 (2013.01); H01L 21/76849 (2013.01); H01L 23/147 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/481 (2013.01); H01L 23/53238 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15311 (2013.01);
Abstract
A semiconductor device includes a copper interconnect provided in a trench in an insulation film, a metal film provided on the insulation film along a boundary between the insulation film and the copper interconnect, a barrier metal provided between an inner wall of the trench and the copper interconnect and extending over the metal layer, a first metal cap to cover the copper interconnect and the barrier metal located over the metal film, and a second metal cap to continuously cover the first metal cap, the barrier metal and the metal film.