The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jul. 21, 2014
Tae Hun Kim, Anysang-si, KR;
Sung Joon Kim, Suwon-si, KR;
Young Kyu Sung, Osan-si, KR;
Wan Ho Lee, Hwaseong-si, KR;
Tae Sung Jang, Hwaseong-si, KR;
Tae Young Park, Yongin-si, KR;
Wan Tae Lim, Suwon-si, KR;
Tae Hun Kim, Anysang-si, KR;
Sung Joon Kim, Suwon-si, KR;
Young Kyu Sung, Osan-si, KR;
Wan Ho Lee, Hwaseong-si, KR;
Tae Sung Jang, Hwaseong-si, KR;
Tae Young Park, Yongin-si, KR;
Wan Tae Lim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element.